SYNCPOWER/擎力 SPP3413S23RGB
SPP3413-P-Channel Enhancement Mode MOSFET 
DataSheet
DESCRIPTION
The SPP3413 is the
P-Channel logic enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology.
This high density
process is especially tailored to minimize on-state resistance.
These
devices are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other battery powered circuits,
and low in-line power loss are needed in a very small outline surface mount
package.
FEATURES
?? -20V/-3.4 A,RDS(ON)=
95mΩ@VGS=-4.5V
?? -20V/-2.4 A,RDS(ON)= 120mΩ@VGS=-2.5V
?? -20V/-1.7
A,RDS(ON)= 145mΩ@VGS=-1.8V
?? Super high density cell design for extremely
low RDS (ON)
?? Exceptional on-resistance and maximum DC current
capability
?? SOT-23-3L package design
APPLICATIONS
?? Power Management in
Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC
Converter
?? Load Switch
?? DSC
?? LCD Display inverter
