产品列表
共计 291 条库存
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 询价 |
|---|---|---|---|---|---|---|
|
HY1908D-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
HY1908D-VB
|
|
|
NCEP1520K-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
NCEP1520K-VB
|
|
|
NCE2060K-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
NCE2060K-VB,N10L16 TO263,NDP7060,NP29N06QUK,NP90N04MUG,KHB9D5N20F1
|
|
|
SPD08P06P-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
SPD08P06P-VB,SPD08P06PGBTMA1,IRL3716PBF,IRLB3036G,IRLB3036GPBF
|
|
|
AOD4186-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
AOD4186-VB,IPG20N06S4L14ATMA1,IRFR430ATRLPBF,IPA50R250CP,IMZA65R048M1H,K20A60U
|
|
|
NCE65T1K2K-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
NCE65T1K2K-VB,IRRLI540N,IPB009N03L G,IPB037N06N3 G,IPF09N03LBG,IPP015N04N G
|
|
|
FDD850N10L-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
FDD850N10L-VB,FDD86081-F085,FDD86250-F085,FDD86369,FDD86369-F085,FDD86380-F085
|
|
|
HUF75329D3ST-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
HUF75329D3ST-VB,HUF75321S3S,IRFRC20,IRFU224PBF,IRFU2607ZPBF
|
|
|
STD95N4F3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
STD95N4F3-VB,STD95P3LLH6AG,IRFR5505CPBF,IRFR8713TRPBF,IRFR8715CTRPBF
|
|
|
RSD200N10-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
RSD200N10-VB,RSD200N05,RSD200N05TL,IRC630,IRC634
|
|
|
STD100N3LF3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
STD100N3LF3-VB,STD140N6F7,STD11NM65N,STD13N60M2,STD17NF25T4,STD150NH02L-1
|
|
|
SSD9971-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
SSD9971-VB,SSD50N08-14D,SSD40P04-20D,SSD40N03,SSD30N15-60D,SSD30N10-50D
|
|
|
NTD25P03-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
NTD25P03-VB,NTD25P03L1,IPU039N03LG,IPU060N03L G,IPU135N08N3 G
|
|
|
2SJ325-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
2SJ325-VB,FR120Z,ME2323D,IRFR3712TRPBF,IRFR8203TRPBF,IRFR8721TRPBF
|
|
|
FDD24AN06LA0-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO-252
|
FDD24AN06LA0-VB,FDD24AN06LA0-F085,IPP80P03P4L-07,IPP80P04P4-07,IPP80P04P4L-08
|