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共计 52894 条库存
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分类：
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
SI2318DS-T1-GE3-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
SIS110DN-T1-GE3`SI4058DY-T1-GE3`SIR588DP-T1-RE3`SIJ482DP-T1-GE3`SI4874BDY-T1-E3
|
SI2318DS-T1-GE3;SI2318DS-T1-GE3
SI2318DS-T1-GE3;SI2318DS-T1-GE3
|
|
|
ZXMN4A06GTA-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT223
|
ZXMN4A06GTC`IXFH15N80`2SK3151`2SK3314
|
ZXMN4A06GTA;ZXMN4A06GTA
ZXMN4A06GTA;ZXMN4A06GTA
|
|
|
AP2311GN-HF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
AP2311N`2SK1338`2SK1457`CEP20P10
|
AP2311GN-HF(APEC/富鼎);AP2311GN-HF
AP2311GN-HF(APEC/富鼎);AP2311GN-HF
|
|
|
BUF634U-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
BUF634`HY1420P`PMPB20XNEAX`ZXMN2B14FHTA
|
BUF634U
BUF634U
|
|
|
FGHL75T65MQDT-VB
|
IGBT管
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
FGHL40T65MQDT`FGHL50T65MQD`AFGHL40T120RLD`AFGHL40T65SQD`AFGHL40T120RWD
|
FGHL75T65MQDT;FGHL75T65MQDT
FGHL75T65MQDT;FGHL75T65MQDT
|
|
|
RTR040N03TL-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
NTD65N03RT4G`NTB75N03RT4G`NTD95N02RT4G`NTB75N03RT4`RT1C060UN
|
RTR040N03TL(ROHM/罗姆)
RTR040N03TL(ROHM/罗姆)
|
|
|
MDS3652URH-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
MDS1652EURH`MDS9754URH`MDS1652AURH`MDS1652ERUH`MDS1652URH
|
MDS3652URH
MDS3652URH
|
|
|
SI3483CDV-T1-GE3-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-6
|
SI3867DV-T1-GE3`SI3122DV-T1-GE3`SI3585DV-T1-GE3`SI300N03UKHE3-TP`SI3134KWAS-TP
|
SI3483CDV-T1-GE3
SI3483CDV-T1-GE3
|
|
|
FDY100PZ-NL-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SC75-3
|
FS3004`IRL1404SPBF`NP90N04PUF`B100NF04`FS3206
|
|
|
|
CSD19502Q5B-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
CSD13202Q2T`CSD16342Q5AT`CSD16323Q3T`BU28SD2MG-MTR
|
CSD19502Q5B
CSD19502Q5B
|
|
|
PMV37ENER-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT-23
|
PM39LV010-70JCE`APM2070PDC-TRL`PMPB15XN,115`PML260SN,118`PMR290UNE,115
|
PMV37ENER
PMV37ENER
|
|
|
NVMFS5C612NLAFT1G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
NVMFS5C612NLAFT1G-YE`K11A65D`TK17A65W5`K12A60U
|
|
|
|
SIR184DP-T1-RE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
SIRC16DP-T1-RE3`SIRS5702DP-T1-RE3`SIRS578DPW-T1-RE3`SIR5402DP-T1-UE3`SIR5404DP
|
|
|
|
HY1908P-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
HY1807P`HY1808AP`HY14P10P`HY1306S`HY1605D
|
HY1908P
HY1908P
|
|
|
HGTG30N60B3D-VB
|
IGBT管
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
SIHG120N60E-GE3`SiHG11N80AE`RQJ0301HGDQS`SIHG180N60E-GE3`4813NHG
|
HGTG30N60B3D;HGTG30N60B3D
HGTG30N60B3D;HGTG30N60B3D
|