|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
SOP-8
|
21000
|
惠州
|
CMS4612A,SOP-8,MOS,N+P场,60V,5.5A,0.04Ω,2W
CMS4612A,SOP-8,MOS,N+P场,60V,5.5A,0.04Ω,2W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
939
|
惠州
|
CMD30NP02L,TO-252-4L,MOS,N+P场,20V,30A,,40W
CMD30NP02L,TO-252-4L,MOS,N+P场,20V,30A,,40W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
343
|
惠州
|
CMD30NP06,TO-252-4L,MOS,N+P场,60V,30A,0.028Ω,55W
CMD30NP06,TO-252-4L,MOS,N+P场,60V,30A,0.028Ω,55W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
21000
|
惠州
|
CMSA3606,DFN-8 5X6,MOS,N+P场,30V,25A,0.021Ω,20W
CMSA3606,DFN-8 5X6,MOS,N+P场,30V,25A,0.021Ω,20W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
183
|
惠州
|
CMSA3R19,DFN-8 5X6,MOS,N+P场,30V,40A,0.011Ω,35W
CMSA3R19,DFN-8 5X6,MOS,N+P场,30V,40A,0.011Ω,35W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
CMD510B,TO-252-4L,MOS,N+P场,100V,14A,0.11Ω,35W
CMD510B,TO-252-4L,MOS,N+P场,100V,14A,0.11Ω,35W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
5999
|
惠州
|
CMSA609,DFN-8 5X6,MOS,N+P场,40V,20A,0.017Ω,25W
CMSA609,DFN-8 5X6,MOS,N+P场,40V,20A,0.017Ω,25W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
SOP-8
|
11000
|
惠州
|
CMS510B,SOP-8,MOS,N+P场,100V,5A,0.11Ω,2.5W
CMS510B,SOP-8,MOS,N+P场,100V,5A,0.11Ω,2.5W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
P3004ND5G,TO-252-4L,MOS,N+P场,30V,16A,0.02Ω,25W
P3004ND5G,TO-252-4L,MOS,N+P场,30V,16A,0.02Ω,25W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-83.3X3.3
|
11000
|
惠州
|
CMSC25NP02,DFN-8 3.3X3.3,MOS,N+P场,20V,25A,,20W
CMSC25NP02,DFN-8 3.3X3.3,MOS,N+P场,20V,25A,,20W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
10
|
惠州
|
CMD30NP04,TO-252-4L,MOS,N+P场,40V,30A,0.019Ω,40W
CMD30NP04,TO-252-4L,MOS,N+P场,40V,30A,0.019Ω,40W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
11000
|
惠州
|
CMSA3811A,DFN-8 5X6,MOS,N+P场,30V,16A,0.012Ω,15W
CMSA3811A,DFN-8 5X6,MOS,N+P场,30V,16A,0.012Ω,15W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
11000
|
惠州
|
CMSA3811,DFN-8 5X6,MOS,N+P场,30V,16A,0.012Ω,15W
CMSA3811,DFN-8 5X6,MOS,N+P场,30V,16A,0.012Ω,15W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
CMD603B,TO-252-4L,MOS,N+P场,60V,13A,0.063Ω,27W
CMD603B,TO-252-4L,MOS,N+P场,60V,13A,0.063Ω,27W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
P3004ND5K,TO-252-4L,MOS,N+P场,30V,16A,0.02Ω,25W
P3004ND5K,TO-252-4L,MOS,N+P场,30V,16A,0.02Ω,25W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-85X6
|
11000
|
惠州
|
CMSA20NP06,DFN-8 5X6,MOS,N+P场,60V,20A,0.033Ω,40W
CMSA20NP06,DFN-8 5X6,MOS,N+P场,60V,20A,0.033Ω,40W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-83.3X3.3
|
21000
|
惠州
|
CMSC3811,DFN-8 3.3X3.3,MOS,N+P场,30V,20A,0.0085Ω,10W
CMSC3811,DFN-8 3.3X3.3,MOS,N+P场,30V,20A,0.0085Ω,10W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
11000
|
惠州
|
CMD40NP06,TO-252-4L,MOS,N+P场,60V,40A,0.018Ω,75W
CMD40NP06,TO-252-4L,MOS,N+P场,60V,40A,0.018Ω,75W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
51000
|
惠州
|
CMD607A,TO-252-4L,MOS,N+P场,30V,20A,0.02Ω,25W
CMD607A,TO-252-4L,MOS,N+P场,30V,20A,0.02Ω,25W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
SOP-8
|
21000
|
惠州
|
CMS4611S,SOP-8,MOS,N+P场,60V,6A,0.05Ω,2W
CMS4611S,SOP-8,MOS,N+P场,60V,6A,0.05Ω,2W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
51000
|
惠州
|
CMD609,TO-252-4L,MOS,N+P场,40V,12A,0.021Ω,27W
CMD609,TO-252-4L,MOS,N+P场,40V,12A,0.021Ω,27W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
GAOGE/高格芯
|
23+
|
SOP8
|
401923
|
|
30V/N 5.8A P 4.1A
30V/N 5.8A P 4.1A
|
|
江苏高格芯微电子有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
CMD603A,TO-252-4L,MOS,N+P场,60V,13A,0.055Ω,27W
CMD603A,TO-252-4L,MOS,N+P场,60V,13A,0.055Ω,27W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TSOP-6
|
11000
|
惠州
|
CMC3606,TSOP-6,MOS,N+P场,30V,4.5A,0.028Ω,1.14W
CMC3606,TSOP-6,MOS,N+P场,30V,4.5A,0.028Ω,1.14W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-83.3X3.3
|
11000
|
惠州
|
CMSC25NP06,DFN-8 3.3X3.3,MOS,N+P场,60V,25A,0.042Ω,35W
CMSC25NP06,DFN-8 3.3X3.3,MOS,N+P场,60V,25A,0.042Ω,35W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
4758
|
惠州
|
CMD4511,TO-252-4L,MOS,N+P场,40V,17A,0.013Ω,56W
CMD4511,TO-252-4L,MOS,N+P场,40V,17A,0.013Ω,56W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
DFN-83.3X3.3
|
51000
|
惠州
|
CMSC3606,DFN-8 3.3X3.3,MOS,N+P场,30V,20A,0.025Ω,20W
CMSC3606,DFN-8 3.3X3.3,MOS,N+P场,30V,20A,0.025Ω,20W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
XINWO/鑫沃
|
23+
|
SOP-8
|
300000
|
|
N30V6.9A P30V5.3A
N30V6.9A P30V5.3A
|
|
深圳东为电子科技有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
TO-252-4L
|
21000
|
惠州
|
CMD607B,TO-252-4L,MOS,N+P场,30V,20A,0.02Ω,25W
CMD607B,TO-252-4L,MOS,N+P场,30V,20A,0.02Ω,25W
|
|
广东场效应半导体有限公司
|
|
|
N+P沟道MOS管
|
|
CMOS/场效应半导体
|
24+
|
SOP-8
|
5999
|
惠州
|
CMS4614,SOP-8,MOS,N+P场,40V,8A,0.017Ω,2W
CMS4614,SOP-8,MOS,N+P场,40V,8A,0.017Ω,2W
|
|
广东场效应半导体有限公司
|
|
