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共计 52894 条库存
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分类：
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
AOD9N40-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
TK40A10J1`K25A20D`K20A25D`AP09N70I-A`TK380A65Y
|
AOD9N40
AOD9N40
|
|
|
BSC052N08NS5-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
BSC052N03LSATMA1`BSC052N03S G`SQ9407EY-T1`P5506HVG
|
BSC052N08NS5;BSC052N08NS5
BSC052N08NS5;BSC052N08NS5
|
|
|
NCE1520K-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
IXTP240N055T`SSP6N60`IXTP70N075T2`PSMN005-75P`TK46E08N1
|
|
|
|
FDMS86255-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
FDS6894AZ-NL`FDFS6N303-NL`FDS6986-NL`FDS4936`FDS6912-NL
|
FDMS86255
FDMS86255
|
|
|
AOD7N65-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
UTD351G-AE3-R`RQK0603CGDQATL-E`PA203EMG`SM2315PSA`UT2311G-AE3-R
|
AOD7N65
AOD7N65
|
|
|
SIR680DP-T1-RE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
SIR690DP-T1-BE3`SIR690DP-T1-UE3`SIR638ADP-T1-UE3`2SK3451-01MR
|
|
|
|
FDP2572-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
FDS7764-NL`FDS7764S-NL`FDS9412A-NL`FDS9412-NL`FDS4480S-NL
|
FDP2572;FDP2572
FDP2572;FDP2572
|
|
|
2SK2158-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
2SK2158-L-A`2SK2158-T2B-AT`2SJ193`2SJ208
|
2SK2158;2SK2158
2SK2158;2SK2158
|
|
|
NCE65T540-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
TN0200TS-T1-E3`WNM2306`CMN3402M`615N`MTD10N10ELT4
|
NCE65T540;NCE65T540
NCE65T540;NCE65T540
|
|
|
BSS84W-7-F-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SC70-3
|
BSS84W-TP`STP6N60M2`IKP06N60T`IXFH320N10T2
|
BSS84W-7-F;BSS84W-7-F
BSS84W-7-F;BSS84W-7-F
|
|
|
IRF540PBF-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
AUIRF540ZS`AUIRF540Z`AUIRF540ZSTRL`IRF540FI`AUIRF540ZPBF
|
IRF540PBF;IRF540PBF
IRF540PBF;IRF540PBF
|
|
|
DMPH6050SFGQ-7-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(3X3)
|
DMPH6051SSS-13`DMPH6051SFVW-7`DMPH6051SFVWQ-13`DMPH6051SFVWQ-7`DMPH6051SSSQ-13
|
DMPH6050SFGQ-7;DMPH6050SFGQ-7
DMPH6050SFGQ-7;DMPH6050SFGQ-7
|
|
|
2SJ197-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT89
|
2SJ194`2SJ195`2SJ195-TL-E`2SJ199(0)-T1-AZ
|
2SJ197
2SJ197
|
|
|
IPD034N06N3G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
IPD036N04L G`IPD038N04NG`IPD035N06L3G`IPD031N06L3 G`IPD030N03LF2SATMA1
|
IPD034N06N3G
IPD034N06N3G
|
|
|
EM6M2T2R-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SC75-6
|
CEM6428`EM6K33T2R`CEM6056`CEM6601`CEM6867
|
EM6M2T2R;EM6M2T2R
EM6M2T2R;EM6M2T2R
|