产品列表
共计 52894 条库存
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分类:
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
IKW75N65EL5-VB
|
IGBT管
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
IXTY26P10T`IPP110N20NA`IPP60R380E6`IXFH110N10P`IXTH30N60P
|
IKW75N65EL5;IKW75N65EL5
IKW75N65EL5;IKW75N65EL5
|
|
|
DMPH6050SSD-13-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
DMTH4M90LPSWQ`DMT68M8LPS-13`DMT69M8LFV`DMT3003LFG-7`DMT3006LFVQ-7
|
DMPH6050SSD-13
DMPH6050SSD-13
|
|
|
STW56N60DM2-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
STB85NF3LLT4`STB60NF06`STK0260`STF5N60M2`STF20NK50Z
|
STW56N60DM2;STW56N60DM2
STW56N60DM2;STW56N60DM2
|
|
|
BSC109N10NS3G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
BSC109N10NS3GATMA1`STM6960`STS4DPF30L`W341
|
BSC109N10NS3G
BSC109N10NS3G
|
|
|
EMF30N02J-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
AP4533GEM`CEM4948`AP4028GEMT-HF`EMA09N03AN`P7004EM
|
EMF30N02J
EMF30N02J
|
|
|
SiA400EDJ-T1-GE3-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN6(2X2)
|
SiA406DJ-T1-GE3`DTS3402`AP2305AGN-HF`IXTY44N10T
|
SiA400EDJ-T1-GE3;SiA400EDJ-T1-GE3
SiA400EDJ-T1-GE3;SiA400EDJ-T1-GE3
|
|
|
BSS138DW-7-F-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SC70-6
|
BSS138DW-7-F-79`SSM6N39TU`STGP19NC60SD`IXFH34N50P3
|
BSS138DW-7-F(DIODES/美台);BSS138DW-7-F
BSS138DW-7-F(DIODES/美台);BSS138DW-7-F
|
|
|
FDD8880-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
FDD8880-SN00319`2SK902`FDMS7650DC`FDMS7660
|
FDD8880;FDD8880
FDD8880;FDD8880
|
|
|
AO4266-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
K5A60D`K5A65D`K18A50D`AP9561GI-HF`JMPL1050AGQ
|
|
|
|
TK11A65W-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220F
|
TK11A60`TK11A60D(STA4,Q,M)`RSS070P05`W214
|
TK11A65W;TK11A65W
TK11A65W;TK11A65W
|
|
|
FQD11P06-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
FQD7N20`FQD4N25`FQD8N25TF`FQD9N25TM_F085`FQD60N03LTM
|
FQD11P06;FQD11P06
FQD11P06;FQD11P06
|
|
|
AONS32314-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
AOI4142`AOI4132`AOI4106`AOI408`AOI400
|
|
|
|
NVD4C05NT4G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
NVD4C05N`KIA2301`UT3419G-AE3-R`AM2361P-T1-PF
|
|
|
|
IRL540NS-VB
1
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO263
|
IRL5602SPBF`IRL510S`IRL520STRL`IRL520NL`IRL510STRLPBF
|
IRL540NS
IRL540NS
|
|
|
IPD100N06S4-03-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
IPP044N03LF2SAKSA1`IPP027N08N5AKSA1`IPP05CN10N G`IPP80N03S4L-03`IPP057N06N3 G
|
IPD100N06S4-03;IPD100N06S4-03
IPD100N06S4-03;IPD100N06S4-03
|

