产品列表
共计 22704 条库存
关键词字符必须2个及以上!
分类：
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
IPD90N04S4-02-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,40V,110A,RDS(on)=2.4(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
IPD90N04S4-02
IPD90N04S4-02
|
|
|
IAUCN04S7N015ATMA1-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
N-Ch,40V,180A,RDS(on)=0.8(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
|
|
|
IXFP22N65X2M-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220F
|
N-Ch,650V,20A,RDS(on)=160(mΩ)@VGS=10V,VGS=±30V,Vth=3.5V
|
IXFP22N65X2M;IXFP22N65X2M
IXFP22N65X2M;IXFP22N65X2M
|
|
|
IPT023N10NM5LF2ATMA1-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TOLL
|
N-Ch,100V,200A,RDS(on)=2(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
|
|
|
SIR5810DP-T1-RE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
|
N-Ch,100V,65A,RDS(on)=6(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
|
|
|
DMT63M5LFG-13-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(3X3)
|
N-Ch,60V,50A,RDS(on)=6.5(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
|
|
|
FMA80N10T2-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220F
|
N-Ch,100V,90A,RDS(on)=9(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
|
|
|
NID5001NT4G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,40V,55A,RDS(on)=12(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
|
|
|
SISH108DN-T1-GE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(3X3)
|
N-Ch,20V,58A,RDS(on)=5.5(mΩ)@VGS=4.5V,VGS=±12V,Vth=0.5~1.5V
|
|
|
|
AOK40B60D1-VB
|
IGBT管
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
IGBT+FRD,600/650V,40A,VCEsat=1.7V@ VGE=15V,VGE=±30V,VGEth=5V
|
AOK40B60D1;AOK40B60D1
AOK40B60D1;AOK40B60D1
|
|
|
IRFB4310-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
N-Ch,100V,120A,RDS(on)=5(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
IRFB4310;IRFB4310
IRFB4310;IRFB4310
|
|
|
IRF1405ZPBF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
N-Ch,60V,210A,RDS(on)=3(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
|
|
|
FDMA1024NZ-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN6(2X2)-B
|
N+N-Ch,30V,5.8A,RDS(on)=22(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
FDMA1024NZ
FDMA1024NZ
|
|
|
DTM9435-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
P-Ch,-30V,-5.8A,RDS(on)=33(mΩ)@VGS=10V,VGS=±20V,Vth=-1.7V
|
|
|
|
NDS331N-NL-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
N-Ch,20V,6A,RDS(on)=28(mΩ)@VGS=4.5V,VGS=±12V,Vth=0.5~1.5V
|
NDS331N-NL(ONSEMI/安森美)
NDS331N-NL(ONSEMI/安森美)
|