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分类：
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
PSMN165-200K,518-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
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SOP8
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N-Ch,200V,5.2A,RDS(on)=65(mΩ)@VGS=10V,VGS=±20V,Vth=3.5V
|
|
|
|
DMTH10H029LFDFW-7-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN6(2X2)
|
N-Ch,100V,7A,RDS(on)=75(mΩ)@VGS=10V,VGS=±20V,Vth=1.8V
|
|
|
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MCU012N10YL-TP-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,100V,85A,RDS(on)=8.5(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
|
|
|
TPCA8064-H,LQ(CM-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)
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N-Ch,30V,80A,RDS(on)=7(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
|
|
|
TK32E12N1-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
N-Ch,100V,100A,RDS(on)=9(mΩ)@VGS=10V,VGS=±20V,Vth=2.5V
|
TK32E12N1
TK32E12N1
|
|
|
XP161A1265PR-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT89
|
N-Ch,30V,6.8A,RDS(on)=22(mΩ)@VGS=4.5V,VGS=±20V,Vth=1.7V
|
XP161A1265PR
XP161A1265PR
|
|
|
FQP16N25C-F105-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO220
|
N-Ch,250V,14A,RDS(on)=190(mΩ)@VGS=10V,VGS=±20V,Vth=3.5V
|
|
|
|
IRLR120TRPBF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,100V,15A,RDS(on)=114(mΩ)@VGS=10V,VGS=±20V,Vth=1.8V
|
|
|
|
IRFR7546TR-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,60V,97A,RDS(on)=4.5(mΩ)@VGS=10V,VGS=±20V,Vth=3V
|
|
|
|
IRL2910STRL-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO263
|
N-Ch,100V,70A,RDS(on)=20(mΩ)@VGS=10V,VGS=±20V,Vth=1.8V
|
|
|
|
AO6801A-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-6
|
P+P-Ch,-20V,-4A,RDS(on)=75(mΩ)@VGS=4.5V,VGS=±12V,Vth=-0.6V
|
AO6801A(AOS/万代)
AO6801A(AOS/万代)
|
|
|
SI2305DS-T1-GE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
P-Ch,-20V,-4A,RDS(on)=60(mΩ)@VGS=10V,VGS=±12V,Vth=-0.8V
|
SI2305DS-T1-GE3(VISHAY/威世)
SI2305DS-T1-GE3(VISHAY/威世)
|
|
|
SQJ460AEP-T1_GE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
LFPAK56
|
N-Ch,60V,64A,RDS(on)=6.2(mΩ)@VGS=10V,VGS=±20V,Vth=1~3V
|
|
|
|
PMV164ENER-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
N-Ch,60V,4A,RDS(on)=75(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
PMV164ENER
PMV164ENER
|
|
|
NVMFD5C680NLWFT1G-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(5X6)-B
|
N+N-Ch,60V,17A,RDS(on)=32(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
|