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共计 22704 条库存
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分类：
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 替代参考 | 询价 |
|---|---|---|---|---|---|---|---|
|
BUK9Y11-30B-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
LFPAK56
|
N-Ch,30V,90A,RDS(on)=2.8(mΩ)@VGS=10V,VGS=±20V,Vth=0.8V
|
|
|
|
STW12N170K5-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO247
|
N-Ch,1500V,4A,RDS(on)=4500(mΩ)@VGS=10V,VGS=±30V,Vth=3.5V
|
STW12N170K5
STW12N170K5
|
|
|
DMT31M8LFVW-13-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
DFN8(3X3)
|
N-Ch,30V,70A,RDS(on)=2(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
|
|
|
SQ2310CES-T1_GE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
N-Ch,20V,6A,RDS(on)=28(mΩ)@VGS=4.5V,VGS=±12V,Vth=0.5~1.5V
|
|
|
|
PDN6911S-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
P-Ch,-60V,-5.2A,RDS(on)=50(mΩ)@VGS=10V,VGS=±20V,Vth=-1.7V
|
|
|
|
BSP315PH6327-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT223
|
|
||
|
IRFBC20SPBF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO263
|
N-Ch,650V,4A,RDS(on)=2200(mΩ)@VGS=10V,VGS=±30V,Vth=3.5V
|
|
|
|
IRF7467TRPBF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
N-Ch,30V,13A,RDS(on)=8(mΩ)@VGS=10V,VGS=±20V,Vth=1.7V
|
|
|
|
FDS8435A-NL-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOP8
|
P-Ch,-30V,-9A,RDS(on)=18(mΩ)@VGS=10V,VGS=±20V,Vth=-1.7V
|
|
|
|
SI2302CDS-T1-BE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
SOT23-3
|
N-Ch,20V,6A,RDS(on)=28(mΩ)@VGS=4.5V,VGS=±12V,Vth=0.5~1.5V
|
|
|
|
AUIRFR2407TRPBF-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
N-Ch,100V,45A,RDS(on)=18(mΩ)@VGS=10V,VGS=±20V,Vth=1.8V
|
|
|
|
SGH40N60UFDTU-VB
|
IGBT管
|
VBSEMI/微碧半导体
|
26+
|
TO3P
|
IGBT+FRD,600/650V,20A,VCEsat=1.65V@ VGE=15V,VGE=±30V,VGEth=5V
|
SGH40N60UFDTU
SGH40N60UFDTU
|
|
|
J177-VB
|
低压MOS管
|
VBSEMI/微碧半导体
|
26+
|
TO220F
|
P-Ch,-60V,-30A,RDS(on)=50(mΩ)@VGS=10V,VGS=±20V,Vth=-1.7V
|
J177;J177
J177;J177
|
|
|
FQB9N50C-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO263
|
N-Ch,650V,12A,RDS(on)=800(mΩ)@VGS=10V,VGS=±30V,Vth=3.5V
|
|
|
|
SUD50P04-08-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
26+
|
TO252
|
P-Ch,-40V,-50A,RDS(on)=12(mΩ)@VGS=10V,VGS=±20V,Vth=-2V
|
SUD50P04-08;SUD50P04-08
SUD50P04-08;SUD50P04-08
|