产品列表
共计 20500 条库存
| 型号 | 分类 | 品牌 | 批号 | 封装 | 参数规格 | 询价 |
|---|---|---|---|---|---|---|
|
P1260ATFS-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO220F
|
P1260ATFS-VB,P1260ATF,IXKH47N60C,IPW60R190E6,IPW60R024P7
|
|
|
PMF250XNEX-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
SOT-323
|
PMF250XNEX-VB,WPM2341-3 TR,PMPB09R5VPX,PMC85XP,APM4548KC-TRL,APM4030ANUC-TRL
|
|
|
PSMN057-200B-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO263
|
PSMN057-200B-VB,PSMN070-200B,PSMN011-80YS,PSMN035-150B,PSMN039-100YS,PSMN026-80YS
|
|
|
PSMN1R4-40YLDX-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
LFPAK56(PowerSO-8)
|
PSMN1R4-40YLDX-VB,PSMN1R8-40YLC,PSMN1R5-40YSDX,PSMN1R2-25YLC,PSMN1R5-40YSD,PSMN1R5-30BLEJ
|
|
|
PXN9R0-30QLJ-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
PDFN-8(3x3.1)
|
PXN9R0-30QLJ-VB,PXN8R3-30QLJ,LSIC1MO120E0080,LP2305DSLT1G,K1053
|
|
|
RJK0631JPD-00-J3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO252
|
RJK0631JPD-00-J3-VB,RJK5012DPE-00-J3,RJK5014DPK,RJK4518DPK,RJK1008DPN-00,RJK5020DPK
|
|
|
RSD150N06-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO252
|
RSD150N06-VB,RSD150N06TL,PSMN102-200Y,P8008BDA,P1003EVG
|
|
|
RUH4040M2-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
DFN8(3X3)
|
RUH4040M2-VB,RUH4020H,SI7812DN-T1-GE3,SI7106DN-T1-E3,SI6433DQ-T1-E3
|
|
|
SI4480DY-T1-E3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
SOP8
|
SI4480DY-T1-E3-VB,SI4455DY-T1-E3,SI4423DY-T1-E3,SI4447DY-T1-E3,SI4425FDY-T1-GE3,SI4421DY-T1
|
|
|
SI4884DY-T1-E3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
SOP8
|
SI4884DY-T1-E3-VB,SI4834BDY-T1-GE3,SI4858DY-T1-E3,SI4832DY-T1-E3,SM3113NSUC
|
|
|
SI9407AEY-T1-E3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
SOP8
|
SI9407AEY-T1-E3-VB,SI9410BDY-T1-E3,SI9433DY-T1-E3,SI9430DY-T1,SI9435DY-T1
|
|
|
SIR5607DP-T1-RE3-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
DFN8(5X6)
|
SIR5607DP-T1-RE3-VB,SIR5623DP,VS3518AS,TSM35N10CPROG,SQS462EN-T1-GE3
|
|
|
SSC8013GS6-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
SOT23-3
|
SSC8013GS6-VB,SSM3K15FV,DMP6110SSD-13,SSM3K7002BFS,DMT6016LSS-13,DMN6040SSD-13
|
|
|
SSH11N90-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
DFN8(5X6)
|
SSH11N90-VB,SSH22N50A,SSH70N10A,SSH7N80A,WNM2021
|
|
|
STD4NK80ZT4-VB
|
MOS(场效应管)
|
VBSEMI/微碧半导体
|
25+
|
TO252
|
STD4NK80ZT4-VB,STD4NK80Z-1,100N10F7 TO252,YJG25GP10AQ,WSF15N10
|

